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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQI4N80TU

FQI4N80TU

FQI4N80TU
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Part Number FQI4N80TU
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 3.9A I2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 86048 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.873$0.787$0.632$0.492$0.407

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$0.873

Product parameter

Part Number FQI4N80TU Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 3.9A I2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 86048 pcs Data sheet FQB4N80, FQI4N80
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package I2PAK (TO-262) Series QFET®
Rds On (Max) @ Id, Vgs 3.6 Ohm @ 1.95A, 10V Power Dissipation (Max) 3.13W (Ta), 130W (Tc)
Packaging Tube Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 800V
Detailed Description N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Through Hole I2PAK (TO-262) Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)

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