FQI4N80TU
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Buy FQI4N80TU with confidence from Components-World.HK, 1 Year Warranty
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Part Number | FQI4N80TU |
---|---|
Manufacturer | AMI Semiconductor / ON Semiconductor |
Description | MOSFET N-CH 800V 3.9A I2PAK |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Reference Price (In US Dollars) | 1 pcs | 10 pcs | 100 pcs | 500 pcs | 1000 pcs |
---|---|---|---|---|---|
$0.873 | $0.787 | $0.632 | $0.492 | $0.407 |
- Product parameter
- Data sheet
Product parameter
Part Number | FQI4N80TU | Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|---|---|
Description | MOSFET N-CH 800V 3.9A I2PAK | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 86048 pcs | Data sheet | FQB4N80, FQI4N80 |
Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 5V @ 250µA |
Vgs (Max) | ±30V | Technology | MOSFET (Metal Oxide) |
Supplier Device Package | I2PAK (TO-262) | Series | QFET® |
Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 1.95A, 10V | Power Dissipation (Max) | 3.13W (Ta), 130W (Tc) |
Packaging | Tube | Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 25V | Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
FET Type | N-Channel | FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 800V |
Detailed Description | N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Through Hole I2PAK (TO-262) | Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
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