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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQI3N30TU

FQI3N30TU

FQI3N30TU
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Part Number FQI3N30TU
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 300V 3.2A I2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4983 pcs
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Part Number FQI3N30TU Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 300V 3.2A I2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4983 pcs Data sheet FQB3N30, FQI3N30
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package I2PAK (TO-262) Series QFET®
Rds On (Max) @ Id, Vgs 2.2 Ohm @ 1.6A, 10V Power Dissipation (Max) 3.13W (Ta), 55W (Tc)
Packaging Tube Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 300V
Detailed Description N-Channel 300V 3.2A (Tc) 3.13W (Ta), 55W (Tc) Through Hole I2PAK (TO-262) Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)

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