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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQI47P06TU

FQI47P06TU

FQI47P06TU
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Part Number FQI47P06TU
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 60V 47A I2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4902 pcs
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Part Number FQI47P06TU Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 60V 47A I2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4902 pcs Data sheet FQB47P06, FQI47P06
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±25V Technology MOSFET (Metal Oxide)
Supplier Device Package I2PAK (TO-262) Series QFET®
Rds On (Max) @ Id, Vgs 26 mOhm @ 23.5A, 10V Power Dissipation (Max) 3.75W (Ta), 160W (Tc)
Packaging Tube Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
FET Type P-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 60V
Detailed Description P-Channel 60V 47A (Tc) 3.75W (Ta), 160W (Tc) Through Hole I2PAK (TO-262) Current - Continuous Drain (Id) @ 25°C 47A (Tc)

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