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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQI50N06LTU

FQI50N06LTU

FQI50N06LTU
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Part Number FQI50N06LTU
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 60V 52.4A I2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5620 pcs
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Part Number FQI50N06LTU Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 60V 52.4A I2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5620 pcs Data sheet FQB50N06L, FQI50N06L
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package I2PAK (TO-262) Series QFET®
Rds On (Max) @ Id, Vgs 21 mOhm @ 26.2A, 10V Power Dissipation (Max) 3.75W (Ta), 121W (Tc)
Packaging Tube Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 52.4A (Tc) 3.75W (Ta), 121W (Tc) Through Hole I2PAK (TO-262) Current - Continuous Drain (Id) @ 25°C 52.4A (Tc)

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