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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQB4N20TM

FQB4N20TM

FQB4N20TM
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Part Number FQB4N20TM
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 200V 3.6A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4523 pcs
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Part Number FQB4N20TM Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 200V 3.6A D2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4523 pcs Data sheet FQB4N20, FQI4N20
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series QFET®
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 1.8A, 10V Power Dissipation (Max) 3.13W (Ta), 45W (Tc)
Packaging Cut Tape (CT) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names FQB4N20TMCT Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 220pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V Detailed Description N-Channel 200V 3.6A (Tc) 3.13W (Ta), 45W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)

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