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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQB4N20LTM

FQB4N20LTM

FQB4N20LTM
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Part Number FQB4N20LTM
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 200V 3.8A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5057 pcs
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Part Number FQB4N20LTM Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 200V 3.8A D2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5057 pcs Data sheet FQB,FQI4N20L
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series QFET®
Rds On (Max) @ Id, Vgs 1.35 Ohm @ 1.9A, 10V Power Dissipation (Max) 3.13W (Ta), 45W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 25V Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 5V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Drain to Source Voltage (Vdss) 200V
Detailed Description N-Channel 200V 3.8A (Tc) 3.13W (Ta), 45W (Tc) Surface Mount D²PAK (TO-263AB) Current - Continuous Drain (Id) @ 25°C 3.8A (Tc)

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