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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQB50N06LTM

FQB50N06LTM

FQB50N06LTM
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Part Number FQB50N06LTM
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 60V 52.4A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 80370 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs
$0.645$0.572$0.452

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Target Price:(USD)
Quantity:
Total:
$0.645

Product parameter

Part Number FQB50N06LTM Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 60V 52.4A D2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 80370 pcs Data sheet FQB50N06L, FQI50N06L
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series QFET®
Rds On (Max) @ Id, Vgs 21 mOhm @ 26.2A, 10V Power Dissipation (Max) 3.75W (Ta), 121W (Tc)
Packaging Cut Tape (CT) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names FQB50N06LTMFSCT Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 11 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 52.4A (Tc) 3.75W (Ta), 121W (Tc) Surface Mount D²PAK (TO-263AB) Current - Continuous Drain (Id) @ 25°C 52.4A (Tc)

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