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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQB3N90TM

FQB3N90TM

FQB3N90TM
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Part Number FQB3N90TM
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 900V 3.6A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5402 pcs
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Part Number FQB3N90TM Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 900V 3.6A D2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5402 pcs Data sheet FQB3N90, FQI3N90
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series QFET®
Rds On (Max) @ Id, Vgs 4.25 Ohm @ 1.8A, 10V Power Dissipation (Max) 3.13W (Ta), 130W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 900V
Detailed Description N-Channel 900V 3.6A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263AB) Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)

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