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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQB8P10TM

FQB8P10TM

FQB8P10TM
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number FQB8P10TM
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 100V 8A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 105206 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs
$0.529$0.469$0.371

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Quantity:
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Product parameter

Part Number FQB8P10TM Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 100V 8A D2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 105206 pcs Data sheet FQB8P10, FQI8P10
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series QFET®
Rds On (Max) @ Id, Vgs 530 mOhm @ 4A, 10V Power Dissipation (Max) 3.75W (Ta), 65W (Tc)
Packaging Cut Tape (CT) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names FQB8P10TMCT Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
FET Type P-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 100V
Detailed Description P-Channel 100V 8A (Tc) 3.75W (Ta), 65W (Tc) Surface Mount D²PAK (TO-263AB) Current - Continuous Drain (Id) @ 25°C 8A (Tc)

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