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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQB8N60CTM-WS

FQB8N60CTM-WS

FQB8N60CTM-WS
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Part Number FQB8N60CTM-WS
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 7.5A
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4533 pcs
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Part Number FQB8N60CTM-WS Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 7.5A Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4533 pcs Data sheet FQB8N60C, FQI8N60C
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series QFET®
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 3.75A, 10V Power Dissipation (Max) 3.13W (Ta), 147W (Tc)
Packaging Cut Tape (CT) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names FQB8N60CTM-WSCT
FQB8N60CTM_WSCT
FQB8N60CTM_WSCT-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1255pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V Detailed Description N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)

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