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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQB8N60CTM

FQB8N60CTM

FQB8N60CTM
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Part Number FQB8N60CTM
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 7.5A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 56891 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs
$0.725$0.653$0.525

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Target Price:(USD)
Quantity:
Total:
$0.725

Product parameter

Part Number FQB8N60CTM Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 7.5A D2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 56891 pcs Data sheet FQB8N60C, FQI8N60C
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series QFET®
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 3.75A, 10V Power Dissipation (Max) 3.13W (Ta), 147W (Tc)
Packaging Original-Reel® Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names FQB8N60CTMFSDKR Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1255pF @ 25V Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 600V
Detailed Description N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263AB) Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)

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