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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI5441BDC-T1-GE3

SI5441BDC-T1-GE3

SI5441BDC-T1-GE3
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Part Number SI5441BDC-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 20V 4.4A 1206-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 106496 pcs
Reference Price
(In US Dollars)		3000 pcs
$0.193

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Total:
$0.193

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Part Number SI5441BDC-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 20V 4.4A 1206-8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 106496 pcs Data sheet SI5441BDC
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1.4V @ 250µA
Vgs (Max) ±12V Technology MOSFET (Metal Oxide)
Supplier Device Package 1206-8 ChipFET™ Series TrenchFET®
Rds On (Max) @ Id, Vgs 45 mOhm @ 4.4A, 4.5V Power Dissipation (Max) 1.3W (Ta)
Packaging Tape & Reel (TR) Package / Case 8-SMD, Flat Lead
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 33 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
FET Type P-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Drain to Source Voltage (Vdss) 20V
Detailed Description P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™ Current - Continuous Drain (Id) @ 25°C 4.4A (Ta)

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