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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI5435BDC-T1-GE3

SI5435BDC-T1-GE3

SI5435BDC-T1-GE3
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Part Number SI5435BDC-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 30V 4.3A 1206-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4681 pcs
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Part Number SI5435BDC-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 30V 4.3A 1206-8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4681 pcs Data sheet Si5435BDC
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 1206-8 ChipFET™ Series TrenchFET®
Rds On (Max) @ Id, Vgs 45 mOhm @ 4.3A, 10V Power Dissipation (Max) 1.3W (Ta)
Packaging Cut Tape (CT) Package / Case 8-SMD, Flat Lead
Other Names SI5435BDC-T1-GE3CT Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
FET Type P-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 30V
Detailed Description P-Channel 30V 4.3A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™ Current - Continuous Drain (Id) @ 25°C 4.3A (Ta)

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