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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFBE30

IRFBE30

IRFBE30
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Part Number IRFBE30
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 800V 4.1A TO-220AB
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 4456 pcs
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Part Number IRFBE30 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 800V 4.1A TO-220AB Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 4456 pcs Data sheet Packaging InformationIRFBE30
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB Series -
Rds On (Max) @ Id, Vgs 3 Ohm @ 2.5A, 10V Power Dissipation (Max) 125W (Tc)
Packaging Tube Package / Case TO-220-3
Other Names *IRFBE30 Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 800V Detailed Description N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)

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