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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFBE20S

IRFBE20S

IRFBE20S
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Part Number IRFBE20S
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 800V 1.8A D2PAK
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 4097 pcs
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Part Number IRFBE20S Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 800V 1.8A D2PAK Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 4097 pcs Data sheet
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D2PAK Series -
Rds On (Max) @ Id, Vgs 6.5 Ohm @ 1.1A, 10V Power Dissipation (Max) -
Packaging Tube Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names *IRFBE20S Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 800V Detailed Description N-Channel 800V 1.8A (Tc) Surface Mount D2PAK
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc)

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