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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JAN2N5666S

JAN2N5666S

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Part Number JAN2N5666S
Manufacturer Microsemi
Description TRANS NPN 200V 5A TO39
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 5671 pcs
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Product parameter

Part Number JAN2N5666S Manufacturer Microsemi
Description TRANS NPN 200V 5A TO39 Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 5671 pcs Data sheet 2N5664-65,66(S,U3),67(S)
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 200V
Vce Saturation (Max) @ Ib, Ic 1V @ 5A, 1A Transistor Type NPN
Supplier Device Package TO-39 (TO-205AD) Series Military, MIL-PRF-19500/455
Power - Max 1.2W Packaging Bulk
Package / Case TO-205AD, TO-39-3 Metal Can Other Names 1086-21066
1086-21066-MIL
Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Frequency - Transition - Detailed Description Bipolar (BJT) Transistor NPN 200V 5A 1.2W Through Hole TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A, 5V Current - Collector Cutoff (Max) 200nA
Current - Collector (Ic) (Max) 5A

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