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Home > Products > Integrated Circuits (ICs) > Memory > MT29E2T08CUHBBM4-3ES:B TR

MT29E2T08CUHBBM4-3ES:B TR

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Part Number MT29E2T08CUHBBM4-3ES:B TR
Manufacturer Micron Technology
Description IC FLASH 2T PARALLEL 333MHZ
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 803 pcs
Reference Price
(In US Dollars)		1000 pcs
$42.772

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Part Number MT29E2T08CUHBBM4-3ES:B TR Manufacturer Micron Technology
Description IC FLASH 2T PARALLEL 333MHZ Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 803 pcs Data sheet
Category Integrated Circuits (ICs) Write Cycle Time - Word, Page -
Voltage - Supply 2.5 V ~ 3.6 V Technology FLASH - NAND
Series - Packaging Tape & Reel (TR)
Other Names MT29E2T08CUHBBM4-3ES:B TR-ND
MT29E2T08CUHBBM4-3ES:BTR		 Operating Temperature 0°C ~ 70°C (TA)
Moisture Sensitivity Level (MSL) 3 (168 Hours) Memory Type Non-Volatile
Memory Size 2Tb (256G x 8) Memory Interface Parallel
Memory Format FLASH Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description FLASH - NAND Memory IC 2Tb (256G x 8) Parallel 333MHz Clock Frequency 333MHz

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