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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPI65R110CFDXKSA1

IPI65R110CFDXKSA1

IPI65R110CFDXKSA1
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Part Number IPI65R110CFDXKSA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 650V 31.2A TO262
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5187 pcs
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Part Number IPI65R110CFDXKSA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 650V 31.2A TO262 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5187 pcs Data sheet IPx65R110CFD
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO262-3 Series CoolMOS™
Rds On (Max) @ Id, Vgs 110 mOhm @ 12.7A, 10V Power Dissipation (Max) 277.8W (Tc)
Packaging Tube Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names IPI65R110CFD
IPI65R110CFD-ND
SP000896398
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V Detailed Description N-Channel 650V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO262-3
Current - Continuous Drain (Id) @ 25°C 31.2A (Tc)

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