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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD031N03M G

IPD031N03M G

IPD031N03M G
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Part Number IPD031N03M G
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 30V 90A TO252-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5595 pcs
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Part Number IPD031N03M G Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 30V 90A TO252-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5595 pcs Data sheet IPD031N03L G, IPS031N03L G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.2V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3 Series OptiMOS™
Rds On (Max) @ Id, Vgs 3.1 mOhm @ 30A, 10V Power Dissipation (Max) -
Packaging Original-Reel® Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names IPD031N03M GINDKR
IPD031N03M GINDKR-ND
IPD031N03MGINDKR
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V Detailed Description N-Channel 30V 90A (Tc) Surface Mount PG-TO252-3
Current - Continuous Drain (Id) @ 25°C 90A (Tc)

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