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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB80N06S207ATMA1

IPB80N06S207ATMA1

IPB80N06S207ATMA1
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Part Number IPB80N06S207ATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 55V 80A TO263-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5016 pcs
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Part Number IPB80N06S207ATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 55V 80A TO263-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5016 pcs Data sheet IPx80N06S2-07
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 180µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3-2 Series OptiMOS™
Rds On (Max) @ Id, Vgs 6.3 mOhm @ 68A, 10V Power Dissipation (Max) 250W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names IPB80N06S2-07
IPB80N06S2-07-ND
IPB80N06S207ATMA1TR
SP000218818
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 55V Detailed Description N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2
Current - Continuous Drain (Id) @ 25°C 80A (Tc)

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