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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB60R099P7ATMA1

IPB60R099P7ATMA1

IPB60R099P7ATMA1
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Part Number IPB60R099P7ATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH TO263-3
Lead Free Status / RoHS Status Contains lead / RoHS Compliant
In Stock 40133 pcs
Reference Price
(In US Dollars)
1000 pcs
$0.959

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Quantity:
Total:
$0.959

Product parameter

Part Number IPB60R099P7ATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH TO263-3 Lead Free Status / RoHS Status Contains lead / RoHS Compliant
Quantity Available 40133 pcs Data sheet IPB60R099P7
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 530µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series CoolMOS™ P7
Rds On (Max) @ Id, Vgs 99 mOhm @ 10.5A, 10V Power Dissipation (Max) 117W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names IPB60R099P7
IPB60R099P7ATMA1-ND
IPB60R099P7ATMA1TR
SP001664910
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Contains lead / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1952pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V Detailed Description N-Channel 650V 31A (Tc) 117W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 31A (Tc)

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