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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB05CN10N G

IPB05CN10N G

IPB05CN10N G
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Part Number IPB05CN10N G
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 100A TO263-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5766 pcs
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Part Number IPB05CN10N G Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 100A TO263-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5766 pcs Data sheet IPx05CN10N G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series OptiMOS™
Rds On (Max) @ Id, Vgs 5.1 mOhm @ 100A, 10V Power Dissipation (Max) 300W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names IPB05CN10N G-ND
IPB05CN10NG
SP000096440
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 181nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V Detailed Description N-Channel 100V 100A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)

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