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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB042N10N3GATMA1

IPB042N10N3GATMA1

IPB042N10N3GATMA1
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Part Number IPB042N10N3GATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 100A TO263-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 46317 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs
$1.182$1.067$0.857$0.667

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Target Price:(USD)
Quantity:
Total:
$1.182

Product parameter

Part Number IPB042N10N3GATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 100A TO263-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 46317 pcs Data sheet IPB042N10N3 G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 150µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series OptiMOS™
Rds On (Max) @ Id, Vgs 4.2 mOhm @ 50A, 10V Power Dissipation (Max) 214W (Tc)
Packaging Original-Reel® Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names IPB042N10N3 GDKR
IPB042N10N3 GDKR-ND
IPB042N10N3GATMA1DKR
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 8410pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100V Detailed Description N-Channel 100V 100A (Tc) 214W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)

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