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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SUP25P10-138-GE3

SUP25P10-138-GE3

SUP25P10-138-GE3
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Part Number SUP25P10-138-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 100V 16.3A TO220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4034 pcs
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Part Number SUP25P10-138-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 100V 16.3A TO220AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4034 pcs Data sheet SUP25P10-138-GE3
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB Series TrenchFET®
Rds On (Max) @ Id, Vgs 13.8 mOhm @ 6A, 10V Power Dissipation (Max) 3.1W (Ta), 73.5W (Tc)
Packaging Tube Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 50V Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Drain to Source Voltage (Vdss) 100V
Detailed Description N-Channel 100V 16.3A (Tc) 3.1W (Ta), 73.5W (Tc) Through Hole TO-220AB Current - Continuous Drain (Id) @ 25°C 16.3A (Tc)

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