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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SQP120N10-3M8_GE3

SQP120N10-3M8_GE3

SQP120N10-3M8_GE3
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See Product Specifications for product details.
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Part Number SQP120N10-3M8_GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 100V 120A TO220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 34918 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs
$1.302$1.163$0.954

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Target Price:(USD)
Quantity:
Total:
$1.302

Product parameter

Part Number SQP120N10-3M8_GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 100V 120A TO220AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 34918 pcs Data sheet SQP120N10-3M8
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB Series -
Rds On (Max) @ Id, Vgs 3.8 mOhm @ 20A, 10V Power Dissipation (Max) 250W (Tc)
Packaging Tube Package / Case TO-220-3
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 7230pF @ 25V Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 100V
Detailed Description N-Channel 100V 120A (Tc) 250W (Tc) Through Hole TO-220AB Current - Continuous Drain (Id) @ 25°C 120A (Tc)

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