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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SQJ431AEP-T1_GE3

SQJ431AEP-T1_GE3

SQJ431AEP-T1_GE3
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number SQJ431AEP-T1_GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CHAN 200V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 68237 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.64$0.567$0.448$0.347$0.274

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Product parameter

Part Number SQJ431AEP-T1_GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CHAN 200V Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 68237 pcs Data sheet SQJ431AEP
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® SO-8 Series Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs 305 mOhm @ 3.8A, 10V Power Dissipation (Max) 68W (Tc)
Packaging Cut Tape (CT) Package / Case 8-PowerTDFN
Other Names SQJ431AEP-T1_GE3CT Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V FET Type P-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 200V Detailed Description P-Channel 200V 9.4A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)

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