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RFQs / Order
Part No. Manufacturer Qty  
ADS4146IRGZ25Luminary Micro / Texas Instruments
1050020:0221Phoenix Contact
Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIRC16DP-T1-GE3

SIRC16DP-T1-GE3

SIRC16DP-T1-GE3
OMRON AUTOMATION & SAFETYImages are for reference only.
See Product Specifications for product details.
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Part Number SIRC16DP-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 25V 60A POWERPAKSO-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 99019 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.545$0.483$0.382$0.296$0.234

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Target Price:(USD)
Quantity:
Total:
$0.545

Product parameter

Part Number SIRC16DP-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 25V 60A POWERPAKSO-8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 99019 pcs Data sheet SIRC16DP
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.4V @ 250µA
Vgs (Max) +20V, -16V Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® SO-8 Series TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs 0.96 mOhm @ 15A, 10V Power Dissipation (Max) 54.3W (Tc)
Packaging Original-Reel® Package / Case PowerPAK® SO-8
Other Names SIRC16DP-T1-GE3DKR Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 32 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 5150pF @ 10V Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 25V
Detailed Description N-Channel 25V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8 Current - Continuous Drain (Id) @ 25°C 60A (Tc)

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