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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHP22N60AE-GE3

SIHP22N60AE-GE3

SIHP22N60AE-GE3
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number SIHP22N60AE-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 600V 20A TO220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 41769 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$1.577$1.409$1.155$0.936$0.789

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Target Price:(USD)
Quantity:
Total:
$1.577

Product parameter

Part Number SIHP22N60AE-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 600V 20A TO220AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 41769 pcs Data sheet Packaging InformationSIHP22N60AE
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB Series E
Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Power Dissipation (Max) 179W (Tc)
Packaging Tube Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1451pF @ 100V Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 600V
Detailed Description N-Channel 600V 20A (Tc) 179W (Tc) Through Hole TO-220AB Current - Continuous Drain (Id) @ 25°C 20A (Tc)

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