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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4823DY-T1-GE3

SI4823DY-T1-GE3

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Part Number SI4823DY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 20V 4.1A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 215410 pcs
Reference Price
(In US Dollars)
2500 pcs
$0.105

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Target Price:(USD)
Quantity:
Total:
$0.105

Product parameter

Part Number SI4823DY-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 20V 4.1A 8-SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 215410 pcs Data sheet SI4823DY
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1.5V @ 250µA
Vgs (Max) ±12V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO Series LITTLE FOOT®
Rds On (Max) @ Id, Vgs 108 mOhm @ 3.3A, 4.5V Power Dissipation (Max) 1.7W (Ta), 2.8W (Tc)
Packaging Tape & Reel (TR) Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names SI4823DY-T1-GE3TR
SI4823DYT1GE3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 660pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V FET Type P-Channel
FET Feature Schottky Diode (Isolated) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Drain to Source Voltage (Vdss) 20V Detailed Description P-Channel 20V 4.1A (Tc) 1.7W (Ta), 2.8W (Tc) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)

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