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Part No. Manufacturer Qty  
RNCF0402DTE82R0Stackpole Electronics, Inc.
Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTMSD2P102LR2G

NTMSD2P102LR2G

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Part Number NTMSD2P102LR2G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 20V 2.3A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 131408 pcs
Reference Price
(In US Dollars)
2500 pcs
$0.156

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Quantity:
Total:
$0.156

Product parameter

Part Number NTMSD2P102LR2G Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 20V 2.3A 8-SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 131408 pcs Data sheet NTMSD2P102LR2
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1.5V @ 250µA
Vgs (Max) ±10V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOIC Series FETKY™
Rds On (Max) @ Id, Vgs 90 mOhm @ 2.4A, 4.5V Power Dissipation (Max) 710mW (Ta)
Packaging Tape & Reel (TR) Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names NTMSD2P102LR2GOS Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 3 (168 Hours)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V FET Type P-Channel
FET Feature Schottky Diode (Isolated) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Drain to Source Voltage (Vdss) 20V Detailed Description P-Channel 20V 2.3A (Ta) 710mW (Ta) Surface Mount 8-SOIC
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)

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