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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > MTW32N20E

MTW32N20E

MTW32N20E
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Part Number MTW32N20E
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 200V 32A TO-247
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 5495 pcs
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Part Number MTW32N20E Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 200V 32A TO-247 Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 5495 pcs Data sheet MTW32N20E
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247 Series -
Rds On (Max) @ Id, Vgs 75 mOhm @ 16A, 10V Power Dissipation (Max) 180W (Tc)
Packaging Tube Package / Case TO-247-3
Other Names MTW32N20EOS Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V Detailed Description N-Channel 200V 32A (Tc) 180W (Tc) Through Hole TO-247
Current - Continuous Drain (Id) @ 25°C 32A (Tc)

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