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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQA11N90-F109

FQA11N90-F109

FQA11N90-F109
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Part Number FQA11N90-F109
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 900V 11.4A TO-3P
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 54545 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs450 pcs900 pcs1350 pcs
$1.424$1.27$0.94$0.762$0.711

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Target Price:(USD)
Quantity:
Total:
$1.424

Product parameter

Part Number FQA11N90-F109 Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 900V 11.4A TO-3P Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 54545 pcs Data sheet FQA11N90-F109
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3PN Series QFET®
Rds On (Max) @ Id, Vgs 960 mOhm @ 5.7A, 10V Power Dissipation (Max) 300W (Tc)
Packaging Tube Package / Case TO-3P-3, SC-65-3
Other Names FQA11N90_F109
FQA11N90_F109-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 35 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 900V
Detailed Description N-Channel 900V 11.4A (Tc) 300W (Tc) Through Hole TO-3PN Current - Continuous Drain (Id) @ 25°C 11.4A (Tc)

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