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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > FJP2160DTU

FJP2160DTU

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Part Number FJP2160DTU
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 800V 2A TO-220
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 89183 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.566$0.507$0.395$0.326$0.258

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$0.566

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Part Number FJP2160DTU Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 800V 2A TO-220 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 89183 pcs Data sheet FJP2160D
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 800V
Vce Saturation (Max) @ Ib, Ic 750mV @ 330mA, 1A Transistor Type NPN
Supplier Device Package TO-220-3 Series ESBC™
Power - Max 100W Packaging Tube
Package / Case TO-220-3 Operating Temperature -55°C ~ 125°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 5MHz
Detailed Description Bipolar (BJT) Transistor NPN 800V 2A 5MHz 100W Through Hole TO-220-3 DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 400mA, 3V
Current - Collector Cutoff (Max) 100µA Current - Collector (Ic) (Max) 2A

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