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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SC5706-E

2SC5706-E

2SC5706-E
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Part Number 2SC5706-E
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 50V 5A TP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 178802 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.278$0.246$0.189$0.149$0.119

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Target Price:(USD)
Quantity:
Total:
$0.278

Product parameter

Part Number 2SC5706-E Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 50V 5A TP Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 178802 pcs Data sheet 2SA2039/2SC5706
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 240mV @ 100mA, 2A Transistor Type NPN
Supplier Device Package TP Series -
Power - Max 800mW Packaging Bulk
Package / Case TO-251-3 Short Leads, IPak, TO-251AA Other Names 2SC5706-E-ND
2SC5706-EOS
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 2 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 400MHz
Detailed Description Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Through Hole TP DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V
Current - Collector Cutoff (Max) 1µA (ICBO) Current - Collector (Ic) (Max) 5A
Base Part Number 2SC5706

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