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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SB1216S-E

2SB1216S-E

2SB1216S-E
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Part Number 2SB1216S-E
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 100V 4A TP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 149712 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.306$0.269$0.206$0.163$0.13

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Target Price:(USD)
Quantity:
Total:
$0.306

Product parameter

Part Number 2SB1216S-E Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 100V 4A TP Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 149712 pcs Data sheet 2SB1216/2SD1816
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A Transistor Type PNP
Supplier Device Package TP Series -
Power - Max 1W Packaging Bulk
Package / Case TO-251-3 Short Leads, IPak, TO-251AA Operating Temperature 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 2 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 130MHz Detailed Description Bipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Through Hole TP
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA, 5V Current - Collector Cutoff (Max) 1µA (ICBO)
Current - Collector (Ic) (Max) 4A Base Part Number 2SB1216

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