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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N6667

2N6667

2N6667
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number 2N6667
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP DARL 60V 10A TO220AB
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 4056 pcs
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Product parameter

Part Number 2N6667 Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP DARL 60V 10A TO220AB Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 4056 pcs Data sheet 2N6667,2N6668
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A Transistor Type PNP - Darlington
Supplier Device Package TO-220AB Series -
Power - Max 2W Packaging Tube
Package / Case TO-220-3 Other Names 2N6667OS
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Frequency - Transition - Detailed Description Bipolar (BJT) Transistor PNP - Darlington 60V 10A 2W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 3V Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 10A Base Part Number 2N6667

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