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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JAN2N5416S

JAN2N5416S

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Part Number JAN2N5416S
Manufacturer Microsemi
Description TRANS PNP 300V 1A TO-39
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 5985 pcs
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Product parameter

Part Number JAN2N5416S Manufacturer Microsemi
Description TRANS PNP 300V 1A TO-39 Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 5985 pcs Data sheet 2N5415S,2N5416S
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 300V
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA Transistor Type PNP
Supplier Device Package TO-39 (TO-205AD) Series Military, MIL-PRF-19500/485
Power - Max 750mW Packaging Bulk
Package / Case TO-205AD, TO-39-3 Metal Can Other Names 1086-21053
1086-21053-MIL
Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Frequency - Transition - Detailed Description Bipolar (BJT) Transistor PNP 300V 1A 750mW Through Hole TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 1A

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