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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTB123ESTP

DTB123ESTP

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Part Number	DTB123ESTP
Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS PNP 300MW SPT
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4879 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	DTB123ESTP	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS PNP 300MW SPT	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4879 pcs	Data sheet	DTB123Ex
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA	Transistor Type	PNP - Pre-Biased
Supplier Device Package	SPT	Series	-
Resistor - Emitter Base (R2)	2.2 kOhms	Resistor - Base (R1)	2.2 kOhms
Power - Max	300mW	Packaging	Tape & Box (TB)
Package / Case	SC-72 Formed Leads	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	200MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 300mW Through Hole SPT
DC Current Gain (hFE) (Min) @ Ic, Vce	39 @ 50mA, 5V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	500mA	Base Part Number	DTB123

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