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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD65R950CFDBTMA1

IPD65R950CFDBTMA1

IPD65R950CFDBTMA1
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Part Number IPD65R950CFDBTMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 650V 3.9A TO-252
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 107764 pcs
Reference Price
(In US Dollars)
2500 pcs
$0.221

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Target Price:(USD)
Quantity:
Total:
$0.221

Product parameter

Part Number IPD65R950CFDBTMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 650V 3.9A TO-252 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 107764 pcs Data sheet IPD65R950CFD
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4.5V @ 200µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3 Series CoolMOS™
Rds On (Max) @ Id, Vgs 950 mOhm @ 1.5A, 10V Power Dissipation (Max) 36.7W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names IPD65R950CFDBTMA1TR
SP000953124
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 380pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 14.1nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V Detailed Description N-Channel 650V 3.9A (Tc) 36.7W (Tc) Surface Mount PG-TO252-3
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)

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