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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD180N10N3GBTMA1

IPD180N10N3GBTMA1

IPD180N10N3GBTMA1
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Part Number IPD180N10N3GBTMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 43A TO252-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 6039 pcs
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Part Number IPD180N10N3GBTMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 43A TO252-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 6039 pcs Data sheet IPD180N10N3 G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 33µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3 Series OptiMOS™
Rds On (Max) @ Id, Vgs 18 mOhm @ 33A, 10V Power Dissipation (Max) 71W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names IPD180N10N3 G
IPD180N10N3 G-ND
IPD180N10N3 GTR-ND
IPD180N10N3G
IPD180N10N3GBTMA1TR
IPD180N10N3GXT
SP000482438
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100V Detailed Description N-Channel 100V 43A (Tc) 71W (Tc) Surface Mount PG-TO252-3
Current - Continuous Drain (Id) @ 25°C 43A (Tc)

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