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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB60R190P6ATMA1

IPB60R190P6ATMA1

IPB60R190P6ATMA1
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Part Number IPB60R190P6ATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 600V TO263-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5804 pcs
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Part Number IPB60R190P6ATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 600V TO263-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5804 pcs Data sheet IPx60R190P6
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4.5V @ 630µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series CoolMOS™ P6
Rds On (Max) @ Id, Vgs 190 mOhm @ 7.6A, 10V Power Dissipation (Max) 151W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names IPB60R190P6ATMA1TR
SP001364462
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V Detailed Description N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)

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