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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFN26N100P

IXFN26N100P

IXFN26N100P
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Part Number IXFN26N100P
Manufacturer IXYS Corporation
Description MOSFET N-CH 1000V 23A SOT-227B
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 2350 pcs
Reference Price
(In US Dollars)
10 pcs
$13.617

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Quantity:
Total:
$13.617

Product parameter

Part Number IXFN26N100P Manufacturer IXYS Corporation
Description MOSFET N-CH 1000V 23A SOT-227B Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2350 pcs Data sheet IXFN26N100P
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 6.5V @ 1mA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-227B Series Polar™
Rds On (Max) @ Id, Vgs 390 mOhm @ 13A, 10V Power Dissipation (Max) 595W (Tc)
Packaging Tube Package / Case SOT-227-4, miniBLOC
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 24 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 11900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V Detailed Description N-Channel 1000V 23A (Tc) 595W (Tc) Chassis Mount SOT-227B
Current - Continuous Drain (Id) @ 25°C 23A (Tc)

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