SIHP28N65E-GE3
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See Product Specifications for product details.
Buy SIHP28N65E-GE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SIHP28N65E-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 650V 29A TO220AB |
| Lead Free Status / RoHS Status |
| Reference Price (In US Dollars) | 1000 pcs | ||||
|---|---|---|---|---|---|
| $1.091 | |||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SIHP28N65E-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET N-CH 650V 29A TO220AB | Lead Free Status / RoHS Status | |
| Quantity Available | 35865 pcs | Data sheet | SIHP28N65E |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220AB | Series | - |
| Rds On (Max) @ Id, Vgs | 112 mOhm @ 14A, 10V | Power Dissipation (Max) | 250W (Tc) |
| Packaging | Tube | Package / Case | TO-220-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 3405pF @ 100V | Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
| FET Type | N-Channel | FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 650V |
| Detailed Description | N-Channel 650V 29A (Tc) 250W (Tc) Through Hole TO-220AB | Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
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