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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIE818DF-T1-GE3

SIE818DF-T1-GE3

SIE818DF-T1-GE3
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number SIE818DF-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 75V 60A POLARPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 40577 pcs
Reference Price
(In US Dollars)
3000 pcs
$0.787

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Target Price:(USD)
Quantity:
Total:
$0.787

Product parameter

Part Number SIE818DF-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 75V 60A POLARPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 40577 pcs Data sheet SIE818DF
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 10-PolarPAK® (L) Series TrenchFET®
Rds On (Max) @ Id, Vgs 9.5 mOhm @ 16A, 10V Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Packaging Tape & Reel (TR) Package / Case 10-PolarPAK® (L)
Other Names SIE818DF-T1-GE3TR
SIE818DFT1GE3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 38V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 75V Detailed Description N-Channel 75V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Current - Continuous Drain (Id) @ 25°C 60A (Tc)

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