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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI8465DB-T2-E1

SI8465DB-T2-E1

SI8465DB-T2-E1
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number SI8465DB-T2-E1
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 20V MICROFOOT
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 267492 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.198$0.167$0.125$0.092$0.071

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Target Price:(USD)
Quantity:
Total:
$0.198

Product parameter

Part Number SI8465DB-T2-E1 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 20V MICROFOOT Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 267492 pcs Data sheet SI8465DB
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1.5V @ 250µA
Vgs (Max) ±12V Technology MOSFET (Metal Oxide)
Supplier Device Package 4-Microfoot Series TrenchFET®
Rds On (Max) @ Id, Vgs 104 mOhm @ 1.5A, 4.5V Power Dissipation (Max) 780mW (Ta), 1.8W (Tc)
Packaging Cut Tape (CT) Package / Case 4-XFBGA, CSPBGA
Other Names SI8465DB-T2-E1CT Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 46 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 10V Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
FET Type P-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Drain to Source Voltage (Vdss) 20V
Detailed Description P-Channel 20V 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot Current - Continuous Drain (Id) @ 25°C -

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