SI4900DY-T1-GE3
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See Product Specifications for product details.
Buy SI4900DY-T1-GE3 with confidence from Components-World.HK, 1 Year Warranty
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Part Number | SI4900DY-T1-GE3 |
---|---|
Manufacturer | Electro-Films (EFI) / Vishay |
Description | MOSFET 2N-CH 60V 5.3A 8-SOIC |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Reference Price (In US Dollars) | 2500 pcs | ||||
---|---|---|---|---|---|
$0.212 |
- Product parameter
- Data sheet
Product parameter
Part Number | SI4900DY-T1-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
---|---|---|---|
Description | MOSFET 2N-CH 60V 5.3A 8-SOIC | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 113373 pcs | Data sheet | SI4900DY |
Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 3V @ 250µA |
Supplier Device Package | 8-SO | Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 58 mOhm @ 4.3A, 10V | Power - Max | 3.1W |
Packaging | Tape & Reel (TR) | Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Other Names | SI4900DY-T1-GE3-ND SI4900DY-T1-GE3TR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 33 Weeks | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V | Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
FET Type | 2 N-Channel (Dual) | FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V | Detailed Description | Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25°C | 5.3A | Base Part Number | SI4900 |
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