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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4842BDY-T1-E3

SI4842BDY-T1-E3

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Part Number SI4842BDY-T1-E3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 30V 28A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 65057 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$1.053$0.951$0.764$0.594$0.492

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Target Price:(USD)
Quantity:
Total:
$1.053

Product parameter

Part Number SI4842BDY-T1-E3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 30V 28A 8-SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 65057 pcs Data sheet SI4842BDY
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO Series TrenchFET®
Rds On (Max) @ Id, Vgs 4.2 mOhm @ 20A, 10V Power Dissipation (Max) 3W (Ta), 6.25W (Tc)
Packaging Cut Tape (CT) Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names SI4842BDY-T1-E3CT Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 27 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 3650pF @ 15V Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SO Current - Continuous Drain (Id) @ 25°C 28A (Tc)

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