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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRLD110PBF

IRLD110PBF

IRLD110PBF
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number IRLD110PBF
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 100V 1A 4-DIP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 114855 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.403$0.358$0.283$0.219$0.173

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Target Price:(USD)
Quantity:
Total:
$0.403

Product parameter

Part Number IRLD110PBF Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 100V 1A 4-DIP Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 114855 pcs Data sheet IRLD110
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2V @ 250µA
Vgs (Max) ±10V Technology MOSFET (Metal Oxide)
Supplier Device Package 4-DIP, Hexdip, HVMDIP Series -
Rds On (Max) @ Id, Vgs 540 mOhm @ 600mA, 5V Power Dissipation (Max) 1.3W (Ta)
Packaging Tube Package / Case 4-DIP (0.300", 7.62mm)
Other Names *IRLD110PBF Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Drain to Source Voltage (Vdss) 100V
Detailed Description N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP Current - Continuous Drain (Id) @ 25°C 1A (Ta)

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