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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Arrays > CDBGBSC201200-G

CDBGBSC201200-G

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Part Number CDBGBSC201200-G
Manufacturer Comchip Technology
Description DIODE DUAL SILICON CARBIDE POWER
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 6371 pcs
Reference Price
(In US Dollars)		1020 pcs
$4.893

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Total:
$4.893

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Part Number CDBGBSC201200-G Manufacturer Comchip Technology
Description DIODE DUAL SILICON CARBIDE POWER Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 6371 pcs Data sheet CDBGBSC201200-G
Category Discrete Semiconductor Products Voltage - Forward (Vf) (Max) @ If 1.8V @ 10A
Voltage - DC Reverse (Vr) (Max) 1200V Supplier Device Package TO-247
Speed No Recovery Time > 500mA (Io) Series -
Reverse Recovery Time (trr) 0ns Package / Case TO-247-3
Operating Temperature - Junction -55°C ~ 175°C Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 16 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Diode Type Silicon Carbide Schottky
Diode Configuration 1 Pair Common Cathode Detailed Description Diode Array 1 Pair Common Cathode Silicon Carbide Schottky 1200V 25.9A (DC) Through Hole TO-247-3
Current - Reverse Leakage @ Vr 100µA @ 1200V Current - Average Rectified (Io) (per Diode) 25.9A (DC)

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