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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSM21156DW6T1G

NSM21156DW6T1G

NSM21156DW6T1G
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Part Number NSM21156DW6T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN PREBIAS/PNP SOT363
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 3998 pcs
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Part Number NSM21156DW6T1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN PREBIAS/PNP SOT363 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 3998 pcs Data sheet NSM21156DW6T1G
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V, 65V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA / 300mV @ 500µA, 10mA Transistor Type 1 NPN Pre-Biased, 1 PNP
Supplier Device Package SC-88/SC70-6/SOT-363 Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 230mW Packaging Tape & Reel (TR)
Package / Case 6-TSSOP, SC-88, SOT-363 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition - Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 65V 100mA 230mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V / 220 @ 2mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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